| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ISL9K1560G3 | 15A, 600V Stealth TM Dual Diode | Fairchild-Semiconductor | - | - | - | - | 146 K |
| ISL9K18120G3 | 18A, 1200V Stealth Dual Diode | Fairchild-Semiconductor | - | - | - | - | 147 K |
| ISL9K30120G3 | 30A, 1200V Stealth Dual Diode | Fairchild-Semiconductor | - | - | - | - | 145 K |
| ISL9K3060G3 | 30A, 600V Stealth Dual Diode | Fairchild-Semiconductor | - | - | - | - | 143 K |
| ISL9K460P3 | 4A,600V Stealth Dual Diode | Fairchild-Semiconductor | - | - | - | - | 143 K |
| ISL9K460P3 | 4A,600V Stealth Dual Diode | Fairchild-Semiconductor | - | - | - | - | 143 K |
| ISL9K8120P3 | 8A, 1200V Stealth Dual Diode | Fairchild-Semiconductor | - | - | - | - | 140 K |
| ISL9K860P3 | 8A, 600V Stealth Dual Diode | Fairchild-Semiconductor | - | - | - | - | 144 K |
| ISL9N2357D3ST | 30V, 0.007 Ohm, 35A, N-Channel UltraFET ® Trench Power MOSFET | Fairchild-Semiconductor | - | - | - | - | 260 K |
| ISL9N302AP3 | N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 122 K |
| ISL9N302AP3 | N-Channel Logic Level PWM Optimized UltraFET® Trench Power MOSFETs | Fairchild-Semiconductor | - | - | - | - | 122 K |
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