Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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2SJ201 | Silicon P channel field effect transistor for high power amplifier applications | Toshiba | - | 3 | -55°C | 150°C | 182 K |
ARJ2012 | RJ-relay. SMD relays with 8 GHz capabilities. 2 form C. Standard PC board terminal. Single side stable. Coil rating 12 V DC. Nominal operating power 200 mW. | distributor | - | 10 | -30°C | 70°C | 602 K |
GBJ2010 | 1000V; 20A glass passivated bridge rectifier | distributor | Molded Plastic | 4 | -65°C | 150°C | 53 K |
GBJ2010 | 1000V, 20A glass passivated bridge rectifier | distributor | GBJ | 4 | -55°C | 150°C | 52 K |
GBJ2010 | 20A, 1000V ultra fast recovery rectifier | distributor | GBJ | - | - | - | 88 K |
J201 | 40 V, N-Channel JFET general purpose amplifier | Calogic-LLC | - | 3 | -55°C | 135°C | 20 K |
J201 | N-Channel General Purpose Dual Amplifier | Fairchild-Semiconductor | - | - | - | - | 182 K |
J201 | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 92 K |
MMBFJ201 | N-Channel General Purpose Dual Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 182 K |
SMPJ201 | N-Channel silicon junction field-effect transistor | distributor | SMD | 3 | - | - | 92 K |
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