| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2SK0601 | Silicon N-Channel MOS FET | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 35 K |
| PM50CTK060 | 50A intelligent power module for flat-base type | Mitsubishi-Electric-Corporation-Semiconductor-Group | Insulated package | 25 | -20°C | 150°C | 144 K |
| PM50RSK060 | 30 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 81 K |
| PM50RSK060 | 600V, 50A seven pac IGBT module | distributor | - | - | - | - | 134 K |
| PM75CTK060 | 75A intelligent power module for flat-base type | Mitsubishi-Electric-Corporation-Semiconductor-Group | Insulated package | 25 | -20°C | 150°C | 142 K |
| PM75RSK060 | 75 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 72 K |
| PM75RSK060 | 600V, 75A seven pac IGBT module | distributor | - | - | - | - | 85 K |
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