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k4s641632

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
K4S641632D-TC/L1H1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=2), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C115 K
K4S641632D-TC/L1L1M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 100 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C115 K
K4S641632D-TC/L551M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 183 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C115 K
K4S641632D-TC/L601M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 166 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C115 K
K4S641632D-TC/L701M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 143 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C115 K
K4S641632D-TC/L751M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 133 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C115 K
K4S641632D-TC/L801M x 16bit x 4 banks synchronous DRAM LVTTL. 64 Mbit SDRAM. Max freq. 125 MHz (CL=3), interface LVTTL.Samsung-ElectronicTSOP (II)540°C70°C115 K
K4S641632F-TC1HCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TC1HCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TC1LCMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 100MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
K4S641632F-TL60CMOS SDRAM 4 x 1,048,576 words by 16 bits, max freq. 166MHz, LVTTL interfaceSamsung-ElectronicTSOP II540°C70°C133 K
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