| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4S643232E-TC45 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 222MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| K4S643232E-TC50 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 200MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| K4S643232E-TE50 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 200MHz | Samsung-Electronic | TSOP II | 86 | -25°C | 85°C | 101 K |
| K4S643232E-TE60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | -25°C | 85°C | 101 K |
| K4S643232E-TE70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | Samsung-Electronic | TSOP II | 86 | -25°C | 85°C | 101 K |
| K4S643232E-TL45 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 222MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| K4S643232E-TL50 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 200MHz | Samsung-Electronic | TSOP II | 86 | 0°C | 70°C | 102 K |
| K4S643232E-TN50 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 200MHz | Samsung-Electronic | TSOP II | 86 | -25°C | 85°C | 101 K |
| K4S643232E-TN60 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 166MHz | Samsung-Electronic | TSOP II | 86 | -25°C | 85°C | 101 K |
| K4S643232E-TN70 | 512K x 32bit x 4 banks synchronous DRAM LVTTL, 3.3V, 143MHz | Samsung-Electronic | TSOP II | 86 | -25°C | 85°C | 101 K |
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