Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
---|
2SK545 | N-channel junction silicon FET, impedance converter application | SANYO-Electric-Co--Ltd- | 2050A | 3 | - | - | 73 K |
BUK545-100A | 100 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 56 K |
BUK545-100A | 100 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 56 K |
BUK545-100A | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 13 A. | Philips-Semiconductors | SOT186 | 3 | 0°C | 150°C | 71 K |
BUK545-100B | PowerMOS transistor. Logic level FET. Drain-source voltage 100 V. Drain current(DC) 12 A. | Philips-Semiconductors | SOT186 | 3 | 0°C | 150°C | 71 K |
BUK545-200A | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 56 K |
BUK545-200A | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 56 K |
BUK545-200B | 200 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 56 K |
BUK545-60B | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 57 K |
BUK545-60H | 60 V, power MOS transistor | Philips-Semiconductors | SOT | 3 | - | - | 71 K |
1 [2] |
---|