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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KM416S8030BT-G/F102M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 66 MHz (CL=2&3)Samsung-ElectronicTSOP (II)540°C70°C133 K
KM416S8030BT-G/F82M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 125 MHz (CL=3)Samsung-ElectronicTSOP (II)540°C70°C133 K
KM416S8030BT-G/FA2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 133 MHz (CL=3)Samsung-ElectronicTSOP (II)540°C70°C133 K
KM416S8030BT-G/FH2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=2)Samsung-ElectronicTSOP (II)540°C70°C133 K
KM416S8030BT-G/FL2M x 16bit x 4 banks synchronous DRAM LVTTL. 128 Mbit SDRAM. Max freq. 100 MHz (CL=3)Samsung-ElectronicTSOP (II)540°C70°C133 K
KM416S8030T-G/F102M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHzSamsung-ElectronicTSOP (II)540°C70°C116 K
KM416S8030T-G/F82M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHzSamsung-ElectronicTSOP (II)540°C70°C116 K
KM416S8030T-G/F82M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 125 MHzSamsung-ElectronicTSOP (II)540°C70°C116 K
KM416S8030T-G/FH2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHzSamsung-ElectronicTSOP (II)540°C70°C116 K
KM416S8030T-G/FL2M x 16bit x 4 banks synchronous DRAM LVTTL. Max freq. 100 MHzSamsung-ElectronicTSOP (II)540°C70°C116 K
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