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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KM4100IC8TR3HIGH PERF OP AMPFairchild-Semiconductor----333 K
KM4101IC8TR3HIGH PERF OP AMPFairchild-Semiconductor----333 K
KM4110IT5TR3HIGH PERF OP AMPFairchild-Semiconductor----288 K
KM4120IT6TR3HIGH PERF OP AMPFairchild-Semiconductor----288 K
KM416C1004CJ-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=64msSamsung-ElectronicSOJ420°C70°C804 K
KM416C1004CJ-51M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=64msSamsung-ElectronicSOJ420°C70°C804 K
KM416C1004CJ-61M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, refresh period=64msSamsung-ElectronicSOJ420°C70°C804 K
KM416C1004CJL-51M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refreshSamsung-ElectronicSOJ420°C70°C804 K
KM416C1004CJL-61M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refreshSamsung-ElectronicSOJ420°C70°C804 K
KM416C1204CJL-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refreshSamsung-ElectronicSOJ420°C70°C804 K
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