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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KM416C1204CJ-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=5.0V, refresh period=16msSamsung-ElectronicSOJ420°C70°C804 K
KM416C1204CJ-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, refresh period=16msSamsung-ElectronicSOJ420°C70°C804 K
KM416C1204CJL-601M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refreshSamsung-ElectronicSOJ420°C70°C804 K
KM416C1204CTL-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=5.0V, self-refreshSamsung-ElectronicTSOP440°C70°C804 K
KM416C1204CTL-601M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=5.0V, self-refreshSamsung-ElectronicTSOP440°C70°C804 K
KM416V1204CJ-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16msSamsung-ElectronicSOJ420°C70°C804 K
KM416V1204CJ-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, refresh period=16msSamsung-ElectronicSOJ420°C70°C804 K
KM416V1204CJ-601M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, refresh period=16msSamsung-ElectronicSOJ420°C70°C804 K
KM416V1204CJL-501M x 16Bit CMOS dynamic RAM with extended data out, 50ns, VCC=3.3V, self-refreshSamsung-ElectronicSOJ420°C70°C804 K
KM416V1204CT-451M x 16Bit CMOS dynamic RAM with extended data out, 45ns, VCC=3.3V, refresh period=16msSamsung-ElectronicTSOP440°C70°C804 K
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