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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
KM416V1204BJ-53.3V, 1M x 16 bit CMOS DRAM with extended data out, 50nsSamsung-ElectronicSOJ420°C70°C2 M
KM416V1204BJ-73.3V, 1M x 16 bit CMOS DRAM with extended data out, 70nsSamsung-ElectronicSOJ420°C70°C2 M
KM416V1204BJ-L53.3V, 1M x 16 bit CMOS DRAM with extended data out, 50nsSamsung-ElectronicSOJ420°C70°C2 M
KM416V1204BJ-L63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung-ElectronicSOJ420°C70°C2 M
KM416V1204BT-53.3V, 1M x 16 bit CMOS DRAM with extended data out, 50nsSamsung-ElectronicTSOP II440°C70°C2 M
KM416V1204BT-63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung-ElectronicTSOP II440°C70°C2 M
KM416V1204BT-73.3V, 1M x 16 bit CMOS DRAM with extended data out, 70nsSamsung-ElectronicTSOP II440°C70°C2 M
KM416V1204BT-L53.3V, 1M x 16 bit CMOS DRAM with extended data out, 50nsSamsung-ElectronicTSOP II440°C70°C2 M
KM416V1204BT-L63.3V, 1M x 16 bit CMOS DRAM with extended data out, 60nsSamsung-ElectronicTSOP II440°C70°C2 M
KM416V1204CTL-601M x 16Bit CMOS dynamic RAM with extended data out, 60ns, VCC=3.3V, self-refreshSamsung-ElectronicTSOP440°C70°C804 K
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