| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PBL40305 | Multiband GSM power amplifier | Ericsson-Microelectronics | QSOP | 28 | -25°C | 80°C | 97 K |
| PBL40307 | GSM dual band Tx_VCO | Ericsson-Microelectronics | QSOP | 16 | -25°C | 90°C | 225 K |
| PBL40309 | 3.6 V differential power amplifier for DECT telecommunications system | Ericsson-Microelectronics | QSOP | 16 | -25°C | 80°C | 84 K |
| PBL40310 | 3.5 V GSM 900 MHz power amplifier | Ericsson-Microelectronics | QSOP | 16 | -30°C | 85°C | 64 K |
| SBL4030PT | Schottky Rectifier | General-Semiconductor | - | - | - | - | 77 K |
| SBL4030PT | 30V, 40A schottky barrier rectifier | distributor | - | 3 | -55°C | 125°C | 38 K |
| SBL4035PT | 35V, 40A schottky barrier rectifier | distributor | - | 3 | -55°C | 125°C | 38 K |
| SL4030BD | Quad exlusive-OR gate. High-voltage silicon-gate CMOS. | distributor | SOIC | 14 | -55°C | 125°C | 37 K |
| SL4030BN | Quad exlusive-OR gate. High-voltage silicon-gate CMOS. | distributor | DIP | 14 | -55°C | 125°C | 37 K |
| SL4034BN | 8-stage static bidirectional parallel/serial input/output bus register. High-voltage silicon-gate CMOS. | distributor | DIP | 24 | -55°C | 125°C | 71 K |
| 1 [2] [3] [4] [5] [6] [7] [8] |
|---|
