| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| L601C | General purpose darlington arrays | SGS-Thomson-Microelectronics | DIP | 18 | -25°C | 150°C | 73 K |
| L601E3 | 600 V, 1 A sensitive triac | distributor | - | 3 | -65°C | 110°C | 2 M |
| L601E5 | 600 V, 1 A sensitive triac | distributor | - | 3 | -65°C | 110°C | 2 M |
| L601E6 | 600 V, 1 A sensitive triac | distributor | - | 3 | -65°C | 110°C | 2 M |
| L601E8 | 600 V, 1 A sensitive triac | distributor | - | 3 | -65°C | 110°C | 2 M |
| ML60127R | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 774 K |
| ML60128R | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 21 K |
| ML601J27 | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 774 K |
| ML601J28 | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 21 K |
| ML601J28 | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 21 K |
| [1] 2 [3] |
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