| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ICL8038 | Precision Waveform Generator/Voltage Controlled Oscillator FN2864.3 | Intersil-Corporation | - | - | - | - | 152 K |
| KM416L8031BT-F0 | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416L8031BT-FY | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416L8031BT-FZ | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416L8031BT-G0 | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 100 MHz, speed 10ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416L8031BT-GY | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| KM416L8031BT-GZ | 128 Mb DDR SDRAM. Version 0.61, Operating freq. 133 MHz, speed 7.5 ns. | Samsung-Electronic | - | 66 | 0°C | 70°C | 750 K |
| RL803 | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 200V, max RMS voltage 140V, max DC blocking voltage 200V. Max average forward rectified current 8.0A at Tc=100degC. | distributor | - | 3 | -65°C | 150°C | 25 K |
| RL803S | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 200V, max RMS voltage 140V, max DC blocking voltage 200V. Max average forward rectified current 8.0A at Tc=100degC. | distributor | D2PAK | 3 | -65°C | 150°C | 24 K |
| RL803S | Glass passivated silicon rectifier. Max recurrent peak reverse voltage 200V, max RMS voltage 140V, max DC blocking voltage 200V. Max average forward rectified current 8.0A at Tc=100degC. | distributor | D2PAK | 3 | -65°C | 150°C | 24 K |
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