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ld03

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
RLD03N06CLEPower dissipation 30 W Transistor polarity N Channel Current Id cont. 0.3 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 30 V Resistance Rds on 6 R Voltage ESD breakdown 2 kV Current limit (max) 420 mAFairchild-Semiconductor----188 K
RLD03N06CLE0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETsIntersil-Corporation----93 K
RLD03N06CLESM0.3A, 60V, 6 Ohm, ESD Rated, Current Limited, Voltage Clamped, Logic Level N-Channel Power MOSFETsIntersil-Corporation----93 K
SST58LD032-70-C-P1HATA-disc chipSilicon-Storage-Technology-Inc-PSDIP320°C70°C363 K
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