| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ispLSI1016EA-125LJ44 | In-system programmable high density PLD, 125 MHz, 7.5ns, low power | Lattice-Semiconductor-Corporation | PLCC | 44 | 0°C | 70°C | 162 K |
| ispLSI1016EA-200LJ44 | In-system programmable high density PLD, 200 MHz, 4.5ns, low power | Lattice-Semiconductor-Corporation | PLCC | 44 | 0°C | 70°C | 162 K |
| ispLSI1016EA-200LT44 | In-system programmable high density PLD, 200 MHz, 4.5ns, low power | Lattice-Semiconductor-Corporation | TQFP | 44 | 0°C | 70°C | 162 K |
| ispLSI1032E-100LT | In-system programmable high density PLD, 10ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
| ispLSI1032E-125LT | In-system programmable high density PLD, 7.5ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
| ispLSI1032E-70LT | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
| ispLSI1032E-70LTI | In-system programmable high density PLD, 15ns | Lattice-Semiconductor-Corporation | TQFP | 100 | -40°C | 85°C | 164 K |
| ispLSI1032E-80LJ | In-system programmable high density PLD, 12ns | Lattice-Semiconductor-Corporation | PLCC | 84 | 0°C | 70°C | 164 K |
| ispLSI1032E-90LJ | In-system programmable high density PLD, 10ns | Lattice-Semiconductor-Corporation | PLCC | 84 | 0°C | 70°C | 164 K |
| ispLSI1032E-90LT | In-system programmable high density PLD, 10ns | Lattice-Semiconductor-Corporation | TQFP | 100 | 0°C | 70°C | 164 K |
| [1] 2 [3] [4] [5] [6] |
|---|
