| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CCLM1000 | 1.1 mA, Current limiting diode | distributor | - | 2 | -65°C | 200°C | 303 K |
| CM1000 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current for resistive load 10A. Non-repetive peak forward surge current at rated load 200A. | distributor | - | 4 | -55°C | 150°C | 65 K |
| CM1000 | High current silicon bridge rectifier. Max recurrent peak reverse voltage 50V. Max average forward current for resistive load 10A. Non-repetive peak forward surge current at rated load 200A. | distributor | - | 4 | -55°C | 150°C | 65 K |
| CM1000HA-24H | 1000 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 49 K |
| CM1000HA-24H | 1200V, 1000A single IGBT module | distributor | - | - | - | - | 64 K |
| CM1000HA-28H | 1000 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 54 K |
| CM1000HA-28H | 1000 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 54 K |
| CM1000HA-28H | 1400V, 1000A single IGBT module | distributor | - | - | - | - | 64 K |
| QM1000HA-24B | 1000A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 63 K |
| QM1000HA-2HB | 1000A - transistor module for medium power switching use, insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 5 | -40°C | 150°C | 72 K |
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