| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM200DU-24F | 200A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 71 K |
| CM200DY-12H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 47 K |
| CM200DY-24H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 49 K |
| CM200DY-28H | 200 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 50 K |
| CM200TU-12F | 200A IGBT module for high power switching use | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 17 | -40°C | 150°C | 82 K |
| PM200CSJ060 | 200 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 72 K |
| PM200CVA060 | 200 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 25 | -20°C | 150°C | 61 K |
| PM200DSA060 | 200 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 66 K |
| PM200DSA120 | 200 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 63 K |
| PM200DVA120 | 200 Amp intelligent power module for flat-base type insulated package | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 13 | -20°C | 150°C | 56 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] [10] |
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