| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| CM300DU-12H | 300 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 43 K |
| CM300DU-24H | 300 Amp IGBT module for high power switching use insolated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 43 K |
| CM300DY-12H | 300 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 7 | -40°C | 150°C | 47 K |
| CM300E3U-12H | 300 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 150°C | 44 K |
| CM300HA-12H | 300 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -10°C | 75°C | 43 K |
| CM300HA-24H | 300 Amp IGBT module for high power switching use insulated type | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 4 | -40°C | 150°C | 43 K |
| GM3008 | Stand alone class B hybrid, 6.35mm x 3.81mm x 2.92mm | Gennum-Corporation | Hybrid | 18 | -10°C | 40°C | 110 K |
| MM3002 | CMOS operational amplifier (single) | distributor | - | 5 | -30°C | 85°C | 136 K |
| TDM30010 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | SEE_FACTORY | - | - | - | 120 K |
| TDM30012 | Standard Rectifier (trr more than 500ns) | Microsemi-Corporation | SEE_FACTORY | - | - | - | 120 K |
| [1] [2] [3] 4 [5] [6] [7] [8] [9] [10] |
|---|
