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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
M4A3-256/192-10FAI10ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA256-40°C85°C1 M
M4A3-256/192-12FAI12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA256-40°C85°C1 M
M4A3-384/160-10YI10ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationPQFP208-40°C85°C1 M
M4A3-384/160-12YI12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationPQFP208-40°C85°C1 M
M4A3-384/160-14YI14ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationPQFP208-40°C85°C1 M
M4A3-384/192-10AI10ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA256-40°C85°C1 M
M4A3-384/192-10FAI10ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA256-40°C85°C1 M
M4A3-384/192-12AI12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA256-40°C85°C1 M
M4A3-384/192-12FAI12ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA256-40°C85°C1 M
M4A3-384/192-14AI14ns, 3.3V high performance E2 CMOS in-system programmable logicLattice-Semiconductor-CorporationBGA256-40°C85°C1 M
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