Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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M5M4V16169DTP-10 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
M5M4V16169DTP-15 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
M5M4V16169DTP-7 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
M5M4V64S30ATP-8A | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 1 M |
M5M4V64S30ATP-8L | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 1 M |
M5M4V64S40ATP-10 | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 1 M |
M5M4V64S40ATP-10L | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 1 M |
M5M4V64S40ATP-8 | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 1 M |
M5M4V64S40ATP-8A | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 1 M |
M5M4V64S40ATP-8L | 64M synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 1 M |
[1] 2 [3] [4] [5] |
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