Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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M5M4V16169DRT-10 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
M5M4V16169DRT-15 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
M5M4V16169DRT-8 | 16M (1M-word by 16-bit) cached DRAM with 16K (1024-word by 16-bit) SRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 70 | - | - | 737 K |
M5M4V16G50DFP-10 | 16M synchronous graphics RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | QFP | 100 | 0°C | 70°C | 167 K |
M5M4V16G50DFP-12 | 16M synchronous graphics RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | QFP | 100 | 0°C | 70°C | 167 K |
M5M4V16G50DFP-8 | 16M synchronous graphics RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | QFP | 100 | 0°C | 70°C | 167 K |
M5M4V4265CJ-5 | EDO mode 4194304-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 40 | -20°C | 85°C | 311 K |
M5M4V4265CJ-6 | EDO mode 4194304-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 40 | -20°C | 85°C | 311 K |
M5M4V4265CJ-7 | EDO mode 4194304-bit dynamic RAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | SOJ | 40 | -20°C | 85°C | 311 K |
M5M4V64S20ATP-12 | 64M (4-bank x 4194304-word x 4-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | TSOP | 54 | 0°C | 70°C | 1 M |
[1] [2] 3 [4] [5] |
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