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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
CM30MD-12H30A IGBT module for medium power switching use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-21-40°C150°C143 K
CM50MD-12H50A IGBT module for medium power switching use, insulated typeMitsubishi-Electric-Corporation-Semiconductor-Group-21-40°C150°C149 K
MH16S64BAMD-101,073,741,824-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C591 K
MH16S72BAMD-101,207,959,552-bit (16,777,216-word by 64-bit) synchronous DRAMMitsubishi-Electric-Corporation-Semiconductor-Group--0°C70°C592 K
MH16S72BAMD-101207959552-bit (16777216-word by 72-bit) synchronous dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C592 K
MH4S64CBMD-10268435456 (4194304- word by 64-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C708 K
MH4S64CBMD-12268435456 (4194304- word by 64-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C708 K
MH4S64CBMD-12B268435456 (4194304- word by 64-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C708 K
MH4S64CBMD-15268435456 (4194304- word by 64-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C708 K
MH4S64CBMD-15B268435456 (4194304- word by 64-bit) dynamic RAMMitsubishi-Electric-Corporation-Semiconductor-GroupTSOP1680°C70°C708 K
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