| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MG25M2YK1 | NPN transistor for high power switching and notor control applications, 1000V, 25A | distributor | - | 7 | -40°C | 125°C | 299 K |
| MG25N2YK1 | NPN transistor for high power switching and notor control applications, 1100V, 25A | distributor | - | 7 | -40°C | 125°C | 299 K |
| MG25Q2YS40 | Silicon N-channel IGBT GTR module for high power switching, chopper applications | Toshiba | - | 3 | - | - | 262 K |
| MG25Q6ES51 | Silicon N-channel IGBT GRT module for high power switching, motor control applications | Toshiba | - | 17 | - | - | 261 K |
| MG25Q6ES51 | Silicon N-channel IGBT GRT module for high power switching, motor control applications | Toshiba | - | 17 | - | - | 261 K |
| MG25Q6ES51A | Silicon N-channel IGBT GRT module for high power switching, motor control applications | Toshiba | - | 17 | - | - | 263 K |
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