| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MH32 | 100V surface mount high efficiency power rectifier | distributor | - | 2 | -65°C | 150°C | 130 K |
| MH32S64APFB-7 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 700 K |
| MH32S64APFB-8 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 700 K |
| MH32S64APHB-6 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 699 K |
| MH32S64APHB-7 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 699 K |
| MH32S64APHB-8 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 699 K |
| MH32S64APHB-8 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 699 K |
| MH32S64PHB-10 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 593 K |
| MH32S64PHB-7 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 593 K |
| MH32S64PHB-8 | 2,147,483,648-bit (33,554,432-word by 64-bit) synchronous DRAM | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | - | 0°C | 70°C | 593 K |
| 1 [2] [3] [4] [5] [6] [7] [8] |
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