Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MJE18002 | NPN silicon power transistor | Motorola | - | 3 | -65°C | 150°C | 254 K |
MJE18002 | SWITCHMODE | ON-Semiconductor | - | 3 | - | - | 254 K |
MJE18002D2 | High speed, high gain bipolar NPN power transistor | Motorola | - | 4 | -65°C | 150°C | 152 K |
MJE18002D2 | High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network | ON-Semiconductor | - | 3 | - | - | 152 K |
MJE18004 | Switchmode | ON-Semiconductor | - | 3 | - | - | 422 K |
MJE18004D2 | High speed, high gain bipolar NPN power transistor | Motorola | - | 4 | -65°C | 150°C | 466 K |
MJE18004D2 | High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network | ON-Semiconductor | - | 3 | - | - | 466 K |
MJE18006 | SWITCHMODE | ON-Semiconductor | - | 3 | - | - | 415 K |
MJE18008 | SWITCHMODE | ON-Semiconductor | - | 3 | - | - | 421 K |
MJE18009 | SWITCHMODE NPN Silicon Planar Power Transistor | ON-Semiconductor | - | 3 | - | - | 433 K |
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