| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| ML60114R | High power AlGaAs semiconductor laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 120 K |
| ML60115R | High power AlGaAs semiconductor laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 100 K |
| ML60116R | High power AlGaAs semiconductor laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 60°C | 34 K |
| ML60124R | High power AlGaAs semiconductor laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 209 K |
| ML60125R | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 60°C | 87 K |
| ML60127R | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 774 K |
| ML60128R | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 21 K |
| ML601J24 | High power AlGaAs semiconductor laser diode | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 209 K |
| ML601J25 | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -40°C | 60°C | 87 K |
| ML601J27 | High power AlGaAs semiconductor laser diode for optical information systems | Mitsubishi-Electric-Corporation-Semiconductor-Group | - | 3 | -10°C | 60°C | 774 K |
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