| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| MTD3055EL | N-channel enhancement-mode silicon gate, 10A, 80V | Motorola | - | 3 | -65°C | 150°C | 380 K |
| MTD3055EL1 | N-channel enhancement-mode silicon gate, 10A, 80V | Motorola | - | 3 | -65°C | 150°C | 380 K |
| MTD3055V | N-Channel Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | - | - | - | 380 K |
| MTD3055V | N-channel MOSFET, 12A, 60V | Fairchild-Semiconductor | - | 3 | -55°C | 175°C | 238 K |
| MTD3055V | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 206 K |
| MTD3055V1 | Power MOSFET 12 Amps, 60 volts N–channel | ON-Semiconductor | - | 3 | -55°C | 175°C | 81 K |
| MTD3055VL | TMOS V power field effect transistor D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 175°C | 209 K |
| MTD3055VL | N–channel power MOSFET 12 Amps, 60 Volts | ON-Semiconductor | - | 3 | -55°C | 175°C | 86 K |
| MTD3055VL | N–channel power MOSFET 12 Amps, 60 Volts | ON-Semiconductor | - | 3 | -55°C | 175°C | 86 K |
| MTD3055VT4 | Power MOSFET 12 Amps, 60 volts N–channel | ON-Semiconductor | - | 3 | -55°C | 175°C | 81 K |
| 1 [2] |
|---|
