| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| IRFN044 | HEXFET power mosfet | International-Rectifier | - | 2 | -55°C | 150°C | 211 K |
| IRFN044SMD | 60V Vdss N-Channel FET (field effect transistor) | Semelab-Plc- | SMD1 | - | - | - | 22 K |
| PACDN044T | Transient voltage suppressor array | California-Micro-Devices | TSSOP | 8 | -40°C | 85°C | 84 K |
| PACDN044Y5 | Transient voltage suppressor array | California-Micro-Devices | - | 23 | -20°C | 85°C | 117 K |
| XN04401 | Silicon PNP epitaxial planer transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 42 K |
| XN04402 | Silicon PNP epitaxial planer transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 34 K |
| XN04404 | Silicon PNP epitaxial planer transistor | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 33 K |
| XN04482 | Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2) | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 52 K |
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