| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| PHB125N06LT | 55 V, trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 56 K |
| RF1S30N06LE | TRANSISTOR MOSFET | Fairchild-Semiconductor | - | - | - | - | 91 K |
| RF1S45N06LESM | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 427 K |
| RFD14N06L | 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 83 K |
| RFD14N06LSM | 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 83 K |
| RFD15N06LE | 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 95 K |
| RFD15N06LESM | 15A, 60V, 0.065 Ohm, ESD Rated, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 95 K |
| RFD4N06L | Power dissipation 30 W Transistor polarity N Channel Current Id cont. 4 A Current Idm pulse 10 A Voltage Vgs th max. 2.5 V (I-Pak) Voltage Vds max 60 V Resistance Rds on 0.6 R Temperature current 25 ?C | Fairchild-Semiconductor | - | - | - | - | 38 K |
| RFP14N06L | 14A, 60V, 0.100 Ohm, Logic Level, N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 83 K |
| RFP45N06LE | 45A, 60V, 0.028 Ohm, Logic Level N-Channel Power MOSFETs | Intersil-Corporation | - | - | - | - | 427 K |
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