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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
RFD7N10LE7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETsIntersil-Corporation----361 K
RFD7N10LESM7A, 100V, 0.300 Ohm, N-Channel, Logic Level, Power MOSFETsIntersil-Corporation----361 K
RFG40N10LE40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----413 K
RFP2N10L2A, 80V and 100V, 1.050 Ohm, Logic Level, N-Channel Power MOSFETsIntersil-Corporation----35 K
RFP40N10LE40A, 100V, 0.040 Ohm, Logic Level N-Channel Power MOSFETsIntersil-Corporation----413 K
STD8N10LPower dissipation 45 W Transistor polarity N Channel Current Id cont. 8 A Current Idm pulse 32 A Voltage Vgs th max. 2.5 V Voltage Vds max 100 V Resistance Rds on 0.33 R Temperature current 25 ?CSGS-Thomson-Microelectronics----381 K
STD8N10LPower dissipation 45 W Transistor polarity N Channel Current Id cont. 8 A Current Idm pulse 32 A Voltage Vgs th max. 2.5 V Voltage Vds max 100 V Resistance Rds on 0.33 R Temperature current 25 ?CSGS-Thomson-Microelectronics----381 K
VN10LMN-Channel enhancement-mode MOS transistorCalogic-LLCTO3-55°C150°C24 K
VN10LPN-channel enhancement mode vertical DMOS FETZetex-Semiconductor-3-55°C150°C22 K
VN10LPN-channel enhancement mode vertical DMOS FETZetex-Semiconductor-3-55°C150°C22 K
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