Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IXTA3N110 | 1200V high volatge power MOSFET | distributor | - | 3 | -55°C | 150°C | 102 K |
IXTH13N110 | 1100V MegaMOS FET | distributor | - | 3 | -55°C | 150°C | 46 K |
IXTP3N110 | 1200V high volatge power MOSFET | distributor | - | 3 | -55°C | 150°C | 102 K |
PRN10116N1101J | Bussed resistor network | California-Micro-Devices | SOIC | 16 | 0°C | 70°C | 51 K |
PRN110241002J | Isolated resistor termination network | California-Micro-Devices | QSOP | 24 | -55°C | 125°C | 126 K |
PRN110242001J | Isolated resistor termination network | California-Micro-Devices | QSOP | 24 | -55°C | 125°C | 126 K |
PRN110244701J | Isolated resistor termination network | California-Micro-Devices | QSOP | 24 | -55°C | 125°C | 126 K |
TC54VN1101ECBTR | Voltage detector, Nch output, 1.1V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
TC54VN1101ECTTR | Voltage detector, Nch open drain, 1.1V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
TC54VN1101EMBTR | Voltage detector, Nch open drain, 1.1V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
[1] [2] 3 [4] [5] |
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