Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N1127 | 12A silicon power rectifier, 500V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
1N1128 | 12A silicon power rectifier, 600V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
1N1128A | 12A silicon power rectifier, 600V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
1N1128A | 12A silicon power rectifier, 600V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
1N1128RA | 12A silicon power rectifier, 600V | Microsemi-Corporation | DO4 | 2 | -65°C | 200°C | 138 K |
IFN112 | N-Channel silicon junction field-effect transistor | distributor | - | 3 | - | - | 91 K |
PRN112221/133G | Dual termination network | California-Micro-Devices | QSOP | 20 | 0°C | 70°C | 43 K |
R5421N112C-TR | Li-Ion battery protector | distributor | - | 6 | -40°C | 85°C | 147 K |
R5422N112C | Li-ion battery protector | distributor | - | 6 | -40°C | 85°C | 85 K |
R5422N112E | Li-ion battery protector | distributor | - | 6 | -40°C | 85°C | 85 K |
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