| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGT1S15N120C3S | 35A, 1200V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 139 K |
| HGTG15N120C3 | 35A, 1200V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 139 K |
| HGTG20N120E2 | 34A, 1200V N-Channel IGBT | Intersil-Corporation | - | - | - | - | 167 K |
| HGTP15N120C3 | 35A, 1200V, UFS Series N-Channel IGBTs | Intersil-Corporation | - | - | - | - | 139 K |
| MGW12N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 136 K |
| MGW12N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 168 K |
| MGW20N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 139 K |
| MGY20N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
| MGY25N120 | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 153 K |
| MGY25N120D | Insulated Gate Bipolar Transistor with Anti-Parallel Diode N-Channel | ON-Semiconductor | - | 3 | - | - | 171 K |
| 1 [2] [3] [4] [5] [6] [7] [8] [9] [10] |
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