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Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MTB29N15ETMOS E-FET power field effect transistorMotorolaDPAK4-55°C150°C76 K
MTP29N15ETMOS E-FET power field effect transistorMotorola-4-55°C150°C75 K
MTW26N15ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C160 K
MTW35N15ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C169 K
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