Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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MMFT2N25E | High energy power FET | Motorola | - | 4 | -65°C | 150°C | 139 K |
MTB16N25E | TMOS E-FET high energy power FET | Motorola | DPAK | 4 | -55°C | 150°C | 259 K |
MTB9N25E | TMOS E-FET high energy power FET D2PAK for surface mount | Motorola | DPAK | 4 | -55°C | 150°C | 258 K |
MTP3N25E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 208 K |
MTP9N25E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 150°C | 206 K |
MTW23N25E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 152 K |
MTW32N25E | TMOS E-FET power field effect transistor TO-247 with isolated mounting hole | Motorola | - | 4 | -55°C | 150°C | 151 K |
R3130N25EA-TR | Low voltage detector with built-in delay circuit. Detector threshold 2.5V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
R3130N25EC-TR | Low voltage detector with built-in delay circuit. Detector threshold 2.5V. Standard output delay time 240ms. Output type CMOS. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
R3131N25EA-TR | Low voltage detector with built-in delay circuit. Detector threshold 2.5V. Standard output delay time 240ms. Output type Nch open drain. Detection mode H series output. Taping type TR. | distributor | - | 3 | -40°C | 85°C | 273 K |
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