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n25e

Electronic component:Description:Manuf.PackagePinsT°minT°maxDatasheet
MMFT2N25EHigh energy power FETMotorola-4-65°C150°C139 K
MTB16N25ETMOS E-FET high energy power FETMotorolaDPAK4-55°C150°C259 K
MTB9N25ETMOS E-FET high energy power FET D2PAK for surface mountMotorolaDPAK4-55°C150°C258 K
MTP3N25ETMOS E-FET power field effect transistorMotorola-4-55°C150°C208 K
MTP9N25ETMOS E-FET power field effect transistorMotorola-4-55°C150°C206 K
MTW23N25ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C152 K
MTW32N25ETMOS E-FET power field effect transistor TO-247 with isolated mounting holeMotorola-4-55°C150°C151 K
R3130N25EA-TRLow voltage detector with built-in delay circuit. Detector threshold 2.5V. Standard output delay time 240ms. Output type Nch open drain. Taping type TR.distributor-3-40°C85°C273 K
R3130N25EC-TRLow voltage detector with built-in delay circuit. Detector threshold 2.5V. Standard output delay time 240ms. Output type CMOS. Taping type TR.distributor-3-40°C85°C273 K
R3131N25EA-TRLow voltage detector with built-in delay circuit. Detector threshold 2.5V. Standard output delay time 240ms. Output type Nch open drain. Detection mode H series output. Taping type TR.distributor-3-40°C85°C273 K
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