| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N3583 | Complementary medium-power high voltage power transistor | distributor | - | 2 | -65°C | 200°C | 217 K |
| 2N3583 | NPN Transistor | Microsemi-Corporation | - | - | - | - | 63 K |
| 2N3583 | NPN Transistor | Microsemi-Corporation | - | - | - | - | 63 K |
| 2N3584 | 250V complementary NPN silicon power transistor | distributor | - | 2 | -65°C | 200°C | 224 K |
| 2N3584 | Complementary medium-power high voltage power transistor | distributor | - | 2 | -65°C | 200°C | 217 K |
| 2N3584 | NPN Transistor | Microsemi-Corporation | - | - | - | - | 64 K |
| 2N3585 | 300V complementary NPN silicon power transistor | distributor | - | 2 | -65°C | 200°C | 224 K |
| 2N3585 | Complementary medium-power high voltage power transistor | distributor | - | 2 | -65°C | 200°C | 217 K |
| 2N3585 | NPN Transistor | Microsemi-Corporation | - | - | - | - | 64 K |
| FDN358P | P-Channel Logic Level Enhancement Mode Field Effect Transistor | Fairchild-Semiconductor | - | 3 | - | - | 85 K |
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