Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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1N4150 | Small signal switching diode. Peak reverse voltage VRM = 50 V. Maximum average rectified current IAV = 200 mA. | distributor | - | 2 | -65°C | 175°C | 47 K |
1N4150 | 75V; fast switching diode. Ideal for fast logic applications | distributor | - | 2 | -65°C | 200°C | 50 K |
1N4150 | 50 V, 200 mA, Silicon epitaxial planar diode | distributor | - | 2 | - | - | 23 K |
1N4150W | Surface mount switching diode. Peak reverse voltage 50V. Maximum average forward gurrent at Ta = 25degC 200mA | distributor | - | 2 | -55°C | 125°C | 53 K |
1N4150W-T1 | 50V surface mount fast switching diode | distributor | - | 2 | -65°C | 150°C | 30 K |
1N4150W-T1 | 50V surface mount fast switching diode | distributor | - | 2 | -65°C | 150°C | 30 K |
1N4150W-T3 | 50V surface mount fast switching diode | distributor | - | 2 | -65°C | 150°C | 30 K |
2N4150 | Chip: geometry 9201; polarity NPN | distributor | - | - | - | - | 33 K |
2N4150 | Chip: 10V; 10A geometry 9201; polarity NPN | distributor | - | 3 | -55°C | 200°C | 47 K |
2N4150S | Chip: geometry 9201; polarity NPN | distributor | - | - | - | - | 33 K |
2N4150S | Chip: 10V; 10A geometry 9201; polarity NPN | distributor | - | 3 | -65°C | 200°C | 48 K |
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