| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5086 | 350mW PNP silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 191 K |
| 2N5086 | Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. | distributor | - | 3 | 0°C | 150°C | 76 K |
| 2N5087 | 350mW PNP silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 191 K |
| 2N5087 | Amplifier transistor | Motorola | - | 2 | -55°C | 150°C | 300 K |
| 2N5087 | Amplifier transistor. Collector-emitter voltage: Vceo = -50V. Collector-base voltage: Vcbo = -50V. Collector dissipation: Pc(max) = -625mW. | distributor | - | 3 | 0°C | 150°C | 76 K |
| 2N5088 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 211 K |
| 2N5088 | 350mW NPN silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 191 K |
| 2N5088 | Amplifier transistor. Collector-emitter voltage: Vceo = 30V. Collector-base voltage: Vcbo = 35V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 45 K |
| 2N5089 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 211 K |
| 2N5089 | 350mW NPN silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 191 K |
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