Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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IRFB11N50A | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 11A | International-Rectifier | - | 3 | -55°C | 150°C | 100 K |
IRFB13N50A | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.450 Ohm, ID = 14A | International-Rectifier | - | 3 | -55°C | 150°C | 97 K |
IRFBA22N50A | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.23 Ohm, ID = 24A | International-Rectifier | - | 3 | -40°C | 175°C | 106 K |
IRFIB7N50A | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.52 Ohm, ID = 6.6 A | International-Rectifier | - | 3 | -55°C | 150°C | 96 K |
IRFP22N50A | HEXFET power MOSFET. VDSS = 500V, RDS(on) = 0.23 Ohm, ID = 22A. | International-Rectifier | - | 3 | -55°C | 150°C | 103 K |
IRFPS37N50A | HEXFET power MOSFET. VDSS = 500 V, RDS(on) = 0.13 Ohm, ID = 36 A | International-Rectifier | - | 3 | -55°C | 150°C | 115 K |
R3112N50A-TR | Low voltage detector with output delay. Output voltage 5.0V. Output type Nch open drain. Standard taping type TR. | distributor | - | 5 | -40°C | 85°C | 267 K |
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