| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5210 | 350mW NPN silicon AF low noise small signal transistor | distributor | - | 3 | -55°C | 150°C | 146 K |
| 2N5210 | Amplifier transistor. Collector-emitter voltage: Vceo = 50V. Collector-base voltage: Vcbo = 50V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 45 K |
| IRF5N5210 | HEXFET power MOSFET surface mount. BVDSS = -100V, RDS(on) = 0.060 Ohm, ID = -31A | International-Rectifier | - | 3 | -55°C | 150°C | 118 K |
| MN5210H/BCH | 12-bit military A/D converter | distributor | DIP | 24 | -55°C | 125°C | 1 M |
| MUN5211DW1T1 | 50 V, dual bias resistor transistor | distributor | - | 6 | -55°C | 150°C | 199 K |
| MUN5212DW1T1 | 50 V, dual bias resistor transistor | distributor | - | 6 | -55°C | 150°C | 199 K |
| MUN5213DW1T1 | 50 V, dual bias resistor transistor | distributor | - | 6 | -55°C | 150°C | 199 K |
| MUN5214DW1T1 | 50 V, dual bias resistor transistor | distributor | - | 6 | -55°C | 150°C | 199 K |
| MUN5215DW1T1 | 50 V, dual bias resistor transistor | distributor | - | 6 | -55°C | 150°C | 199 K |
| MUN5216DW1T1 | 50 V, dual bias resistor transistor | distributor | - | 6 | -55°C | 150°C | 199 K |
| [1] [2] [3] [4] 5 [6] |
|---|
