| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N5401 | 100 V, 3 A, General purpose plastic rectifier | distributor | DO | 2 | -50°C | 170°C | 198 K |
| 1N5401 | High current plastic silicon rectifier. Max reccurent peak reverse voltage 100V. Max average forward rectified current 3.0A. | distributor | - | 2 | -55°C | 150°C | 51 K |
| 1N5401G | 100 V, 3.0 A silicon rectifier | distributor | - | 2 | -65°C | 175°C | 16 K |
| 1N5401G | 100 V, 3 A, Glass passivated junction rectifier | distributor | DO | 2 | -65°C | 175°C | 220 K |
| 2N5401 | Amplifier transistor. Collector-emitter voltage: Vceo = -150V. Collector-base voltage: Vcbo = -160V. Collector dissipation: Pc(max) = 625mW. | distributor | - | 3 | 0°C | 150°C | 76 K |
| TC54VN5401ECB | Voltage detector. Detected voltage 5.4V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN5401ECBTR | Voltage detector, Nch output, 5.4V, +/-1% | Microchip-Technology-Inc- | - | 3 | -40°C | 85°C | 215 K |
| TC54VN5401ECTTR | Voltage detector, Nch open drain, 5.4V, +/-1% | Microchip-Technology-Inc- | - | 5 | -40°C | 85°C | 215 K |
| TC54VN5401EMB | Voltage detector. Detected voltage 5.4V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
| TC54VN5401EZB | Voltage detector. Detected voltage 5.4V. Output form: Nch open drain. Tolerance +-1.0%. | TelCom-Semiconductor-Inc- | - | 3 | -40°C | 85°C | 50 K |
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