| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 2N5550 | NPN Epitaxial Silicon Transistor | Fairchild-Semiconductor | - | - | - | - | 28 K |
| 2N5550 | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 147 K |
| 2N5550S | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 152 K |
| 2N5551 | NPN General Purpose Amplifier | Fairchild-Semiconductor | - | 3 | - | - | 500 K |
| 2N5551 | NPN transistor for general purpose and high voltage applications | Korea-Electronics-Co--Ltd- | - | 3 | -55°C | 150°C | 146 K |
| 2N5551ZL1 | Amplifier Transistor NPN | ON-Semiconductor | - | 3 | - | - | 188 K |
| 2N5555 | JFET Switching | ON-Semiconductor | - | 3 | - | - | 271 K |
| AN5515 | TV vertical deflection output circuit | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | 7 | -20°C | 70°C | 78 K |
| AN5534N | Vertical deflection output IC | Panasonic---Semiconductor-Company-of-Matsushita-Electronics-Corporation | - | - | - | - | 48 K |
| FM27C512N55L | 512K-Bit (64K x 8) High Performance CMOS EPROM | Fairchild-Semiconductor | MDIP | 28 | - | - | 100 K |
| [1] [2] [3] [4] 5 [6] [7] [8] [9] [10] |
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