| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| 1N60A | Germanium Diode | Microsemi-Corporation | - | - | - | - | 57 K |
| HGT1S7N60A4DS | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 134 K |
| HGTG30N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 92 K |
| HGTG7N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
| HGTG7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 134 K |
| HGTP7N60A4 | 600V, SMPS Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 168 K |
| HGTP7N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 134 K |
| IRFB9N60A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 9.2A | International-Rectifier | - | 3 | -55°C | 150°C | 135 K |
| IRFIB6N60A | HEXFET power MOSFET. VDSS = 600V, RDS(on) = 0.75 Ohm, ID = 5.5 A | International-Rectifier | - | 3 | -55°C | 150°C | 149 K |
| IXSH30N60AU1 | 600V high speed IGBT with diode | distributor | - | 3 | -55°C | 150°C | 82 K |
| [1] [2] 3 [4] [5] [6] [7] |
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