Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
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HGT1N30N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Fairchild-Semiconductor | - | - | - | - | 144 K |
IXGH32N60A | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 175°C | 44 K |
IXGH32N60AA | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 175°C | 44 K |
IXGH32N60AS | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 175°C | 44 K |
IXGH50N60A | 600V HiPerFAST IGBT | distributor | - | 4 | -55°C | 150°C | 92 K |
IXGH50N60AS | 600V HiPerFAST IGBT | distributor | - | 2 | -55°C | 150°C | 92 K |
IXSH24N60A | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 35 K |
IXSH24N60AU1 | 600V HiPerFAST IGBT with diode | distributor | - | 3 | -55°C | 150°C | 37 K |
IXSN52N60AU1 | 600V IGBT with diode | distributor | - | 4 | -55°C | 150°C | 148 K |
SSS7N60A | N-channel power MOSFET, 600V, 4A | Samsung-Electronic | - | 3 | -55°C | 150°C | 320 K |
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