| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| K4S281632D-NC60 | 128Mb SDRAM, 3.3V, LVTTL, 166MHz | Samsung-Electronic | sTSOPII | 54 | 0°C | 70°C | 132 K |
| K4S561632E-NC60 | 16M x 16 SDRAM, LVTTL, 166MHz | Samsung-Electronic | sTSOP | 54 | 0°C | 70°C | 207 K |
| STB4NC60-1 | N-channel power MOSFET, 600V, 4.2A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 356 K |
| STB4NC60A-1 | N-channel power MOSFET, 600V, 4.2A | SGS-Thomson-Microelectronics | - | 3 | -60°C | 150°C | 338 K |
| STP4NC60 | N-channel power MOSFET, 600V, 4.2A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 356 K |
| STP4NC60A | N-channel power MOSFET, 600V, 4.2A | SGS-Thomson-Microelectronics | - | 3 | -60°C | 150°C | 338 K |
| STP4NC60AFP | N-channel power MOSFET, 600V, 4.2A | SGS-Thomson-Microelectronics | - | 3 | -60°C | 150°C | 338 K |
| STP4NC60FP | N-channel power MOSFET, 600V, 4.2A | SGS-Thomson-Microelectronics | - | 3 | -65°C | 150°C | 356 K |
| STS1HNC60 | N-CHANNEL 600V 7 OHM 0.4A SO-8 POWERMESH II MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 137 K |
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