| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| NTE63 | Silicon NPN transistor. High gain, low noise aplifier. | distributor | - | 4 | -65°C | 150°C | 22 K |
| NTE630 | Silicon rectifier, fast recovery, dual, center tap. Peak repetitive reverse voltage 600V. Average rectifier forward current: 8A (per diode), 16A (total device). | distributor | TO220 | 3 | -65°C | 175°C | 18 K |
| NTE6354 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 400V. | distributor | - | 2 | -40°C | 180°C | 25 K |
| NTE6355 | Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 400V. | distributor | - | 2 | -40°C | 180°C | 25 K |
| NTE6356 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 600V. | distributor | - | 2 | -40°C | 180°C | 25 K |
| NTE6357 | Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 600V. | distributor | - | 2 | -40°C | 180°C | 25 K |
| NTE6358 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1000V. | distributor | - | 2 | -40°C | 180°C | 25 K |
| NTE6359 | Silicon power rectifier diode, 300 Amp. Anode to case. Max repetitive peak reverse voltage 1000V. | distributor | - | 2 | -40°C | 180°C | 25 K |
| NTE6362 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1400V. | distributor | - | 2 | -40°C | 180°C | 25 K |
| NTE6364 | Silicon power rectifier diode, 300 Amp. Cathode to case. Max repetitive peak reverse voltage 1600V. | distributor | - | 2 | -40°C | 180°C | 25 K |
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