| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| GP10N | Glass Passivated Junction Rectifier | General-Semiconductor | - | - | - | - | 61 K |
| HGTP10N120BN | 35A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
| HGTP10N40E1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 37 K |
| HGTP10N40F1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 34 K |
| HGTP10N50C1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 37 K |
| HGTP10N50E1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 37 K |
| HGTP10N50F1D | 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes | Intersil-Corporation | - | - | - | - | 34 K |
| KP10N14 | Transient surge suppressors | Shindengen-Electric-Manufacturing-Company-Ltd- | 2F | - | - | - | 263 K |
| MTP10N40E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 249 K |
| MTP10N40E | TMOS E-FET high energy power FET | Motorola | - | 4 | -65°C | 150°C | 249 K |
| SAP10N | Transistor For Audio Amplifier With Temperature Compensation | Sanken-Electric-Co- | - | - | - | - | 133 K |
| [1] [2] 3 [4] [5] [6] [7] |
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