| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| HGTP11N120CN | 43A, 1200V, NPT Series N-Channel IGBT | Intersil-Corporation | - | - | - | - | 81 K |
| MGP11N60E | Insulated gate bipolar transistor | Motorola | - | 3 | -55°C | 150°C | 123 K |
| MGP11N60E | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 120 K |
| MGP11N60ED | Insulated Gate Bipolar Transistor N-Channel | ON-Semiconductor | - | 3 | - | - | 145 K |
| PHP11N06LT | N-channel TrenchMOS(TM) transistor Logic level FET | Philips-Semiconductors | SOT78 | - | - | - | 112 K |
| PHP11N06LT | 55 V, N-channel trenchMOS transistor logic level FET | Philips-Semiconductors | SOT | 3 | -55°C | 175°C | 114 K |
| STP11NB40 | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 115 K |
| STP11NB40FP | N-CHANNEL ENHANCEMENT MODE POWERMESH MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 115 K |
| STP11NM60 | N-CHANNEL 600V 0.4OHM 11A TO-220 MDMESH POWER MOSFET | SGS-Thomson-Microelectronics | - | - | - | - | 46 K |
| UMP11N | Switching diode | ROHM | UMD6 | 6 | - | - | 83 K |
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