| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|
| BSP127 | 270 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT | 4 | - | - | 50 K |
| BSP127 | 270 V, N-channel enhancement mode vertical D-MOS transistor | Philips-Semiconductors | SOT | 4 | - | - | 50 K |
| BSP127 | N-channel enhancement mode vertical D-MOS transistor. | Philips-Semiconductors | SOT223 | 4 | 0°C | 150°C | 58 K |
| HTIP127 | 5V 5A PNP epiataxial planar transistor for use in general purpose amplifier and low-speed switching applications | distributor | - | 3 | - | - | 41 K |
| HTIP127 | 5V 5A PNP epiataxial planar transistor for use in general purpose amplifier and low-speed switching applications | distributor | - | 3 | - | - | 41 K |
| TIP127 | PNP Epitaxial Darlington Transistor | Fairchild-Semiconductor | - | - | - | - | 45 K |
| TIP127 | PNP silicon darlington power transistor. Designed for use in general-purpose low-speed switching and amplifier applications. Vceo = 100Vdc, Vcb = 100Vdc, Veb = 5Vdc, Ic = 5Adc, PD = 65W. | distributor | - | 3 | -65°C | 150°C | 47 K |
| TLP127 | GaAs ired & photo-transistor | Toshiba | - | 4 | -55°C | 100°C | 328 K |
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