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| Electronic component: | Description: | Manuf. | Package | Pins | T°min | T°max | Datasheet |
|---|---|---|---|---|---|---|---|
| HGTP12N60A4D | 600V, SMPS Series N-Channel IGBT with Anti-Parallel Hyperfast Diode | Intersil-Corporation | - | - | - | - | 394 K |
| HGTP12N60C3 | TRANSISTOR IGBT TO-220 | Fairchild-Semiconductor | - | - | - | - | 131 K |
| IXGP12N100 | 1000V IGBT | distributor | - | 4 | -55°C | 150°C | 51 K |
| IXGP12N100A | 1000V IGBT | distributor | - | 4 | -55°C | 150°C | 51 K |
| IXGP12N100AU1 | 1000V IGBT | distributor | - | 4 | -55°C | 150°C | 116 K |
| IXGP12N100U1 | 1000V IGBT | distributor | - | 4 | -55°C | 150°C | 116 K |
| IXGP12N60B | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 71 K |
| IXGP12N60C | 600V HiPerFAST IGBT | distributor | - | 4 | -55°C | 150°C | 96 K |
| IXGP12N60CD1 | 600V HiPerFAST IGBT | distributor | - | 3 | -55°C | 150°C | 70 K |
| MTP12N10E | TMOS E-FET power field effect transistor | Motorola | - | 4 | -55°C | 170°C | 239 K |
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